2SK360IGFTL RENESAS [Renesas Technology Corp], 2SK360IGFTL Datasheet - Page 2

• Manufacturer Part Number: 2SK360IGFTL
• Description: Silicon N-Channel MOS FET
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK360
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics
Drain to source breakdown voltage
Gate cutoff current
Drain current
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note:
Mark
I
Rev.2.00, Aug 10.2005, page 2 of 5
DSS
1. V
1. The 2SK360 is grouped by I
Grade
GS
= –4 V
Item
Item
IGE
6 to 10
DSS
Symbol
V
V
I
Coss
(BR)DSX
DSS
Crss
Ciss
I
as follows.
|y
GS(off)
PG
NF
GSS
E
fs
*
|
1
Symbol
V
V
Tstg
Pch
Tch
DSX
I
GSS
I
D
G
Min
*
20
—
—
—
—
—
—
1
6
0
8
IGF
8 to 12
0.03
Typ
2.5
1.6
2.0
14
30
—
—
—
—
Max
–2.0
±20
12
—
—
—
—
—
—
—
–55 to +150
F
Ratings
150
150
20
±5
30
±1
Unit
mA
mS
nA
pF
pF
pF
dB
dB
V
V
I
V
V
V
V
f = 1 kHz
V
f = 1 MHz
V
f = 100 MHz
D
GS
DS
DS
DS
DS
DS
= 100
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= ±5 V, V
Test conditions
A, V
D
GS
GS
GS
GS
DS
= 10 A
GS
= 0
= 0
= 0,
= 0,
= 0,
= –4 V
Unit
mW
mA
mA
V
V
(Ta = 25 C)
(Ta = 25 C)
C
C