2SK3600-01S FUJI [Fuji Electric], 2SK3600-01S Datasheet - Page 3

• Manufacturer Part Number: 2SK3600-01S
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3600-01L,S,SJ
100
150
125
100
0.1
14
12
10
10
75
50
25
8
6
4
2
0
1
0
0.00
0
Typical Gate Charge Characteristics
-50
Typical Forward Characteristics of Reverse Diode
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
VGS=f(Qg):ID=20A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C
0.25
-25
Vcc= 50V
0.50
10
0
0.75
25
Qg [nC]
VSD [V]
Tch [ C]
max.
1.00
20
50
typ.
1.25
75
1.50
30
100
1.75
125
2.00
150
40
10
10
10
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
-1
-2
3
2
1
0
10
1
0
10
-50
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 A
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-1
-1
tf
td(on)
tr
-25
0
10
10
0
0
25
FUJI POWER MOSFET
VDS [V]
ID [A]
td(off)
Tch [ C]
50
min.
max.
75
10
10
1
1
100
125
Ciss
Coss
Crss
10
150
10
2
2
3