2SK3600-01S FUJI [Fuji Electric], 2SK3600-01S Datasheet
2SK3600-01S
Manufacturer Part Number
2SK3600-01S
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
FUJI [Fuji Electric]
Datasheet
1.2SK3600-01S.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3600-01S
Manufacturer:
FUJITSU
Quantity:
12 500
www.fujielectric.co.jp/denshi/scd
2SK3600-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
*1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph
*3 I
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Zero gate voltage drain current
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
on
off
= <
DSS
c
=25°C unless otherwise specified)
, Tch 150°C
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AS *2
Symbol
ch
stg
DSX *5
AS *1
D
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
I
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
DSS
r
rr
/dt
fs
GS(th)
*3
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*4
*4 V
Absolute maximum ratings
Ratings
DS
-55 to +150
Test Conditions
V
V
R
V
V
V
channel to ambient
Test Conditions
I
I
I
I
V
V
f=1MHz
V
I
V
L=222 µ H T
I
I
-di/dt=100A/µs
channel to case
D
D
D
D
D
F
F
< =
±116
+150
CC
GS
GS
DS
DS
GS
DS
GS
CC
GS
=20A V
=20A V
= 250 µ A
= 250 µ A
=10A
=10A
=20A
100
±29
±30
155.8
105
100V
=10
70
29
20
=100V V
=80V V
=48V I
=10V
=±30V
=75V
=0V
=50V
=10V
5
1.67
V
V
GS
GS
*2 Tch 150°C
*5 V
D
GS
ch
DS
V
GS
=10A
=0V T
=0V
=25°C
DS
GS
=10V
=25V
V
V
=0V
GS
DS
=0V
=0V
GS
T
= <
=0V
=V
ch
N-CHANNEL SILICON POWER MOSFET
=-30V
ch
kV/µs
kV/µs
W
°C
°C
=25°C
Unit
mJ
V
V
A
A
V
A
GS
=25°C
T
T
ch
ch
=125°C
=25°C
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
100
29
3.0
6
Typ.
Typ.
730
190
10
47
12
12
12
23
22
65
P4
3.8
8.5
9
6
1.10
0.17
Source(S)
Drain(D)
1095
Max.
(mm)
250
100
285
75.0
Max.
25
62
18
18
35
13
33
13.5
1.191
5.0
6
9
1.65
Units
Units
200304
°C/W
°C/W
ns
V
V
µA
nA
m
S
pF
nC
A
V
ns
µC
1
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2SK3600-01S Summary of contents
Page 1
... FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage DSX *5 ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc) 120 100 Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 80 20V VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 10 1 0.1 0 [A] Maximum Avalanche Energy vs. starting Tch ...
Page 3
... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V 150 125 100 max typ -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=20A, Tch=25° Vcc= 50V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...
Page 4
... Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25 C,Vcc=48V Single Pulse Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Outline Drawings (mm) Type( ...