2SK3501-01_03 FUJI [Fuji Electric], 2SK3501-01_03 Datasheet - Page 2

• Manufacturer Part Number: 2SK3501-01_03
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3501-01
Characteristics
100
250
200
150
100
0.1
22
20
18
16
14
12
10
10
50
8
6
4
2
0
1
0
0.1
0
0
Typical Output Characteristics
Allowable Power Dissipation
PD=f(Tc)
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
2
4
25
6
8
50
1
10 12 14 16 18 20 22 24 26
VDS [V]
Tc [ C]
ID [A]
75
100
10
20V
125
VGS=6.5V
7.0V
8V
7.5V
10V
150
0.1
500
450
400
350
300
250
200
150
100
10
2.0
1.5
1.0
0.5
0.0
50
1
0
0
Typical Drain-Source on-state Resistance
0
Typical Transfer Characteristic
0
Maximum Avalanche Energy vs. starting Tch
E
I
I
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
I
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
AS
AS
AS
AS
=5A
=12A
=8A
1
=f(starting Tch):Vcc=60V
VGS=6.5V
25
2
5
3
FUJI POWER MOSFET
50
starting Tch [ C]
4
10
VGS[V]
7.0V
75
ID [A]
5
6
15
100
7
7.5V
8
125
20
8V
10V
9
20V
150
10
2