2SK3501-01_03 FUJI [Fuji Electric], 2SK3501-01_03 Datasheet

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2SK3501-01_03

Manufacturer Part Number
2SK3501-01_03
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
FUJI [Fuji Electric]
Datasheet
1.2SK3501-01_03.pdf (4 pages)
*3 I
2SK3501-01
Super FAP-G Series
*1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
F
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
, Tch 150°C
=25°C unless otherwise specified)
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR *2
Symbol
ch
stg
AS *1
D
DS
GS
DS
R
R
= <
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
r
f
rr
I
/dt
fs
DSS
(BR)DSS
GS(th)
oss
*3
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
*4
*4 VDS 600V
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
*2 Tch 150°C
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=2.33mH T
I
I
-di/dt=100A/µs
V
V
V
I
I
channel to ambient
D
D
D
F
F
channel to case
D
D
< =
CC
GS
+150
DS
GS
GS
CC
GS
=10A V
=10A V
DS
DS
GS
=1mA
= 250 µ A
=10A
=5A
=5A
600
±12
±48
±30
183
195
=300V I
=10V
=10
12
20
=600V V
=480V V
=±30V
=25V
=0V
=250V
=10V
5
2.02
= <
V
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
GS
DS
V
V
ch
=0V T
=10V
=25V
D
=0V
DS
GS
GS
GS
V
=5A
=25°C
DS
=0V
=0V
=0V
=0V
T
=V
ch
ch
=25°C
kV/µs
kV/µs
W
°C
°C
Unit
GS
mJ
V
A
A
V
A
=25°C
T
T
ch
ch
=125°C
=25°C
FUJI POWER MOSFET
TO-220AB
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
600
12
3.0
4
1200
Typ.
Typ.
140
10
17
15
35
30
10
11
0.58
8
6
7
1.00
0.75
5.0
Source(S)
Drain(D)
1800
Max.
250
100
210
62.0
Max.
25
26
23
53
45
16.5
15
11
0.641
5.0
0.75
9
1.50
Units
Units
°C/W
°C/W
200303
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1

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2SK3501-01_03 Summary of contents

Page 1

... Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current I D Pulsed drain current ...

Page 2

... Characteristics Allowable Power Dissipation PD=f(Tc) 250 200 150 100 Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25° VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ...

Page 3

... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 2.0 1.8 1.6 1.4 1.2 1.0 max. 0.8 0.6 0.4 0.2 0.0 -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25° Vcc= 120V 18 300V 16 480V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...

Page 4

... Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Maximum Avalanche Current vs Pulse width I =f(t ):starting Tch=25 C,Vcc=60V Single Pulse http://www.fujielectric.co.jp/denshi/scd [sec] ...

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