2SK3497_06 TOSHIBA [Toshiba Semiconductor], 2SK3497_06 Datasheet
2SK3497_06
Related parts for 2SK3497_06
2SK3497_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) High Power Amplifier Application High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Absolute Maximum Ratings Characteristics Drain−source voltage Gate−source voltage DC (Note 1) Drain current Pulse (Note 1) Drain ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance This transistor is an electrostatic-sensitive device. Please handle with caution. Marking TOSHIBA ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...