2SK3497(F) Toshiba, 2SK3497(F) Datasheet
2SK3497(F)
Specifications of 2SK3497(F)
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2SK3497(F) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. ...
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... Drain−source saturation voltage Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance This transistor is an electrostatic-sensitive device. Please handle with caution. Marking TOSHIBA K3497 Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free (Ta = 25°C) Symbol ...
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I – 3 2 Common source Tc = 25°C Pulse test Drain-source voltage V DS ⎪Y ⎪ – 100 ...
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Safe operating area 100 I D MAX. (pulsed MAX. (continuous ms OPERATION Tc=25℃ Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...