2SC5509-T2 NEC [NEC], 2SC5509-T2 Datasheet - Page 3

• Manufacturer Part Number: 2SC5509-T2
• Description: NPN SILICON RF TRANSISTOR
• Manufacturer: NEC [NEC]

TYPICAL CHARACTERISTICS (Unless otherwise specified, T
Thermal/DC Characteristics
Capacitance/f
1.00
0.80
0.60
0.40
0.20
Ambient Temperature T
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
400
350
300
250
200
150
100
150
100
330
190
0
50
50
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Mounted on
ceramic substrate
(15 15 mm, t = 0.6 mm)
Collector to Base Voltage V
Collector to Emitter Voltage V
Free Air
1.0
25
T
1
Characteristics
50
2.0
2
A
(˚C), Case Temperature T
75
When case temperature
is specified
3.0
3
100
CB
4.0
CE
(V)
f = 1 MHz
4
125
(V)
Data Sheet PU10009EJ01V0DS
5.0
150
5
C
(˚C)
30
25
20
15
10
200
150
100
5
0
50
40
30
20
10
50
0.001
1
0
0
V
f = 2 GHz
A
CE
= +25 C)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
= 3 V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
0.2
= 2 V
0.01
Base to Emitter Voltage V
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current I
Collector Current I
10
0.4
0.1
0.6
1
100
C
C
0.8
(mA)
(mA)
BE
(V)
10
V
1.0
CE
2SC5509
= 2 V
1 000
100
1.2
3