2SK3437_10 TOSHIBA [Toshiba Semiconductor], 2SK3437_10 Datasheet
2SK3437_10
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2SK3437_10 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • ...
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Electrical Characteristics Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time ...
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I – Common source 25°C Pulse test 6 Drain-source voltage V ( – ...
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R – (ON) 2.5 Common source Pulse test 2.0 1.5 1.0 0.5 0 −80 − Case temperature Tc (°C) Capacitance – 10000 1000 ...
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Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.001 10 μ 100 μ Safe operating area 100 I D max (pulsed max (continuous operation Tc = ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...