2SK3437_06 TOSHIBA [Toshiba Semiconductor], 2SK3437_06 Datasheet

2SK3437_06

Manufacturer Part Number

2SK3437_06

Description

Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3437_06.pdf (6 pages)

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DC-DC Converter, Relay Drive and Motor Drive

Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: Pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

temperature

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

= 10 A

= 90 V, T

= 20 kΩ)

DC (Note 1)

Pulse

DSS

= 25°C (initial), L = 4.41 mH, R

= 3.0~5.0 V (V

(Note 1)

(Note 2)

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 4.5 S (typ.)

stg

2SK3437

Symbol

th (ch-a)

th (ch-c)

= 10 V, I

= 0.74 Ω (typ.)

= 600 V)

−55~150

Rating

600

±30

252

150

= 1 mA)

Max

1.56

83.3

= 25 Ω,

Unit

°C

°C/W

Unit

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

2-10S1B

2-10S2B

2006-11-08

―

2SK3437

Unit: mm

Related parts for 2SK3437_06

2SK3437_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...

Page 3

I – Common source 25°C Pulse test 6 Drain-source voltage V ( – ...

Page 4

R – (ON) 2.5 Common source Pulse test 2.0 1.5 1.0 0.5 0 −80 − Channel temperature Tc (°C) Capacitance – 10000 1000 ...

Page 5

Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.001 10 μ 100 μ Safe operating area 100 I D max (pulsed max (continuous operation Tc ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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