2SA1162_08 BILIN [Galaxy Semi-Conductor Holdings Limited], 2SA1162_08 Datasheet - Page 2

• Manufacturer Part Number: 2SA1162_08
• Description: Silicon Epitaxial Planar Transistor
• Manufacturer: BILIN [Galaxy Semi-Conductor Holdings Limited]

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
BL
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
Document number: BL/SSSTC0092
Rev.A
Silicon Epitaxial Planar Transistor
Range
Rank
Galaxy Electrical
FE(1)
70-140
O
Symbol
V
V
V
I
I
h
V
f
C
NF
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
ob
Test conditions
I
I
I
V
V
V
I
V
V
V
f=1MHz,R
C
C
E
C
@ Ta=25℃ unless otherwise specified
CB
EB
CE
CE
CB
CE
=-100μA,I
=-100μA,I
=-1mA,I
=-100mA, I
=-50V,I
=-5V,I
=-6V,I
=-10V, I
=-10V,I
=-6V,I
C
C
B
C
g
=0
=-2mA
=0
E
=0.1mA,
E
=10kΩ
C
E
C
120-240
=0
=0,f=1MHz
=0
=0
=-1mA
B
=-10mA
Y
Production specification
MIN
-50
-50
-5
70
80
TYP
-0.1
2SA1162
1.0
www.galaxycn.com
4
200-400
MAX
-0.1
-0.1
400
-0.3
G
10
7
UNIT
V
V
V
μA
μA
V
MHz
2
dB
pF