2SA1162_08 BILIN [Galaxy Semi-Conductor Holdings Limited], 2SA1162_08 Datasheet
2SA1162_08
Related parts for 2SA1162_08
2SA1162_08 Summary of contents
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BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Low noise:NF=1dB(Typ),10dB(Max). Commplementary to 2SC2712. Small package. APPLICATIONS General purpose application. ORDERING INFORMATION Type No. 2SA1162 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Collector-Base Voltage V CBO Collector-Emitter Voltage V ...
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BL Galaxy Electrical Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure CLASSIFICATION OF ...
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BL Galaxy Electrical Silicon Epitaxial Planar Transistor TYPICAL CHARACTERISTICS Document number: BL/SSSTC0092 Rev.A @ Ta=25℃ unless otherwise specified Production specification 2SA1162 www.galaxycn.com 3 ...
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BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package SOLDERING FOOTPRINT PACKAGE INFORMATION Device Package 2SA1162 SOT-23 Document number: BL/SSSTC0092 Rev.A Unit : mm Shipping 3000/Tape&Reel Production specification 2SA1162 SOT-23 SOT-23 Dim Min Max A 2.85 ...