STGW30NC120HD_07 STMICROELECTRONICS [STMicroelectronics], STGW30NC120HD_07 Datasheet - Page 4

• Manufacturer Part Number: STGW30NC120HD_07
• Description: N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
V
V
Symbol
Symbol
V
CASE
BR(CES)
CE(SAT)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-emitter leakage
current (V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
Parameter
Parameter
CE
CE
= 0)
= 0)
I
V
V
V
V
V
V
V
V
I
C
C
GE
GE
CE
GE
GE
GE
CE
CE
CE
= 20A,V
= 1mA, V
= V
= 15V, I
= 15V, I
=Max rating,Tc=25°C
=Max rating, Tc=125°C
=± 20V , V
= 25V
= 25V, f = 1 MHz, V
= 960V,
Test conditions
Test conditions
GE
, I
GE
,
I
C
C
GE
C
C
=15V
= 20A, Tj= 25°C
= 20A, Tj=125°C
= 250µA
= 20A
= 0
CE
= 0
GE
=0
1200
Min.
3.75
Min.
STGW30NC120HD
Typ.
2510
2.2
2.0
Typ. Max.
175
110
14
30
16
49
± 100
Max.
2.75
5.75
500
120
10
Unit
Unit
mA
nC
nC
nC
pF
pF
pF
µA
nA
V
V
V
V
S