2SK3310_09 TOSHIBA [Toshiba Semiconductor], 2SK3310_09 Datasheet
2SK3310_09
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2SK3310_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement model: V ...
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Electrical Characteristics Characteristics Gate leakage current Gate -source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time ...
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I – Common source 8 25°C Pulse test Drain-source voltage V ( – ...
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R – (ON) 2.0 Common source Pulse test 1.6 1 0.8 0.4 0 −80 − Case temperature Tc (°C) Capacitance – 3000 1000 ...
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Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 Single pulse 0.01 0.01 0.005 0.003 0.001 10 μ 100 μ Safe operating area 100 I D max (pulse max 100 ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...