2sk3310 TOSHIBA Semiconductor CORPORATION, 2sk3310 Datasheet

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2sk3310

Manufacturer Part Number
2sk3310
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
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Quantity
Price
Part Number:
2SK3310
Manufacturer:
TOS
Quantity:
10 000
Part Number:
2SK3310
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
= 90 V, T
GS
DC
Pulse
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 3.7 mH, R
(Note 1)
(Note 2)
= 3.0~5.0 V (V
(Note 1)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
| = 4.3 S (typ.)
AR
AR
stg
D
ch
R
R
DS
D
2SK3310
Symbol
th (ch-a)
th (ch-c)
= 0.48 Ω (typ.)
= 10 V, I
DS
= 450 V)
−55~150
Rating
D
450
450
±30
222
150
10
40
40
10
G
4
1
= 1 mA)
3.125
Max
62.5
= 25 Ω, I
AR
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
V
V
V
A
A
Unit
= 10 A
Weight: 1.9 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10R1B
SC-67
2006-11-06
2SK3310
Unit: mm

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2sk3310 Summary of contents

Page 1

... GSS 222 150 °C ch −55~150 T °C stg Symbol Max Unit R 3.125 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω 2SK3310 Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) 2006-11-06 ...

Page 2

... Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/μ 2SK3310 Min Typ. Max ⎯ ⎯ ±10 ±30 ⎯ ⎯ ⎯ ⎯ 100 ⎯ ⎯ 450 ⎯ 3.0 5.0 ⎯ 0.48 0.65 ⎯ 1.5 4.3 ⎯ ⎯ ...

Page 3

... Drain-source voltage Gate-source voltage V 5 Common source Tc = 25°C Pulse test 10 0.1 100 1 3 2SK3310 I – Common source 25°C Pulse test 9 8 – Common source Tc = 25° ...

Page 4

... C oss rss 100 300 0 −80 −40 Dynamic input/output characteristics 500 400 V DS 300 200 100 0 200 2SK3310 I – −1 V −0.4 −0.6 −0.8 −1 −1.2 ( – Common source Pulse test ...

Page 5

... Pulse width t (S) w 400 300 200 100 Channel temperature (initial 1000 −15 V Test circuit = 25 Ω 3 2SK3310 – 100 125 150 (° VDSS Wave form ⎛ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3310 20070701-EN 2006-11-06 ...

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