2SK3302_06 TOSHIBA [Toshiba Semiconductor], 2SK3302_06 Datasheet
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2SK3302_06
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2SK3302_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • ...
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Electrical Characteristics Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...
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I – 0.5 10 Common source 5 25°C 6 0.4 Pulse test 8 0.3 0 Drain-source voltage V DS (V) I – V ...
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R – (ON) 40 Common source Pulse test 0 0 −80 − 120 Ambient temperature Ta (°C) Capacitance – ...
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Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 0.01 0.01 0.005 0.003 0.001 100 μ Safe operating area max (pulsed max (continuous ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...