2sk3302 TOSHIBA Semiconductor CORPORATION, 2sk3302 Datasheet
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2sk3302
Manufacturer Part Number
2sk3302
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SK3302.pdf
(6 pages)
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Switching Regulator and DC-DC Converter Applications
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement model: V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
= 90 V, T
Characteristics
GS
DC
Pulse
= 20 kΩ)
ch
DSS
th
= 25°C, L = 100 mH, R
(Note 1)
(Note 1)
(Note 2)
= 2.0~4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
DS (ON)
Symbol
V
V
V
E
E
T
I
I
T
P
DGR
GSS
fs
DSS
I
DP
AR
AS
AR
stg
D
ch
D
2SK3302
| = 0.4 S (typ.)
DS
R
= 11.5 Ω (typ.)
= 10 V, I
Symbol
th (ch-a)
DS
G
= 25 Ω, I
= 500 V)
−55~150
Rating
14.3
0.13
500
500
±30
150
D
0.5
1.5
1.3
0.5
1
= 1 mA)
Max
96.1
AR
= 0.5 A
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 1.9 g (typ.)
JEDEC
JEITA
TOSHIBA
2-8MIB
2006-11-06
―
―
2SK3302
Unit: mm