ZXTP03200BGTA ZETEX [Zetex Semiconductors], ZXTP03200BGTA Datasheet - Page 4

• Manufacturer Part Number: ZXTP03200BGTA
• Description: 200V PNP Low VCE(sat) transistor
• Manufacturer: ZETEX [Zetex Semiconductors]

Electrical Characteristics (at T
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
Issue 1 - August 2008
© Diodes Incorporated 2008
Parameter
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
voltage
Emitter-Base Breakdown
Voltage
Collector-Base Cut-off
Current
Emitter Cut-off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
BV
BV
BV
BV
I
I
V
V
V
h
f
C
t
t
t
t
CBO
EBO
T
d
r
s
f
FE
CE(sat)
BE(sat)
BE(on)
obo
CBO
CER
CEO
EBO
amb
= 25°C unless otherwise stated)
Min.
-220
-220
-200
100
100
20
-7
4
Typ.
-245
-245
-225
-130
-135
-180
-955
-860
-8.4
195
170
105
680
-37
<1
<1
50
31
21
18
75
5
-1100
-1000
Max.
-155
-160
-275
-0.5
300
-50
-10
-50
Unit
MHz
mV
mV
mV
mV
mV
mV
nA
μA
nA
pF
ns
ns
ns
ns
V
V
V
V
ZXTP03200BG
Conditions
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
= -100μA
= -100μA
= -1µA, R
= -10mA
= -0.1A, I
= -1A, I
= -2A, I
= -2A, I
= -2A, V
= -1A, V
= -2A, V
= -0.5A, I
= -10mA, V
= -100mA, V
I
= -5A, V
C
I
= -6V
B1
= -200V
= -200V,T
= -10V,f = 1MHz
= -1A, V
= -I
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B
B
B
B2
CE
CE
CE
CE
(*)
B
= -100mA
= -400mA
= -400mA
BE
B
= -100mA
CC
= -10mA
< 1kΩ
= -25mA
= -5V
CE
= -5V
= -5V
amb
= -5V
CE
= -50V,
= -5V
= -10V
=100˚C
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)