ZXTP03200BGTA ZETEX [Zetex Semiconductors], ZXTP03200BGTA Datasheet

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ZXTP03200BGTA

Manufacturer Part Number
ZXTP03200BGTA
Description
200V PNP Low VCE(sat) transistor
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTP03200BGTA
Manufacturer:
DIODES
Quantity:
10 000
ZXTP03200BG
200V PNP Low V
Summary
BV
BV
I
V
R
P
Description
Packaged in the SOT223 outline this new 5
saturation 200V PNP transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various
driving and power management functions
Features
Applications
Ordering Information
Device
ZXTP03200BGTA
Device Marking
ZXTP03200BG
Issue 1 - August 2008
© Diodes Incorporated 2008
C(cont)
CE(sat)
D
CE(sat)
= 3W
CEO
ECO
2 Amps continuous current
Up to 5 Amps peak current
Very low saturation voltage
Enhanced switching performance
DC-DC conversion
= 2A
> -200V
> -2V
< -160mV @ -1A
= 135mΩ
Reel size
(inches)
7
CE
(sat) transistor in SOT223
Tape width
(mm)
12
th
generation low
1
Quantity
per reel
1000
Pin out - top view
B
www.diodes.com
www.zetex.com
C
E

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ZXTP03200BGTA Summary of contents

Page 1

... Amps peak current Very low saturation voltage • • Enhanced switching performance Applications • DC-DC conversion Ordering Information Device Reel size (inches) ZXTP03200BGTA 7 Device Marking ZXTP03200BG Issue 1 - August 2008 © Diodes Incorporated 2008 (sat) transistor in SOT223 CE th generation low Tape width Quantity ...

Page 2

Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (a) Continuous Collector Current Base Current Peak Pulse Current Power Dissipation at T =25°C A Linear Derating Factor Power Dissipation at T =25°C A Linear Derating Factor Power Dissipation at ...

Page 3

Thermal Characteristics 10 V CE(sat) Limit 100m 100ms 10ms Single Pulse. T =25°C amb See note (c) 10m 100m 1 -V Collector-Emitter Voltage (V) CE Safe Operating Area 40 See note (c) 30 D=0.5 20 D=0.2 10 ...

Page 4

Electrical Characteristics (at T Parameter Symbol BV Collector-Base Breakdown Voltage BV Collector-Emitter Breakdown Voltage BV Collector-Emitter Breakdown voltage BV Emitter-Base Breakdown Voltage I Collector-Base Cut-off Current I Emitter Cut-off Current V Collector-Emitter Saturation Voltage V Base-Emitter Saturation Voltage V Base-Emitter ...

Page 5

Typical Characteristics 1 Tamb=25° 100m 10m 1m 10m - I Collector Current ( CE(sat) 350 150°C 300 100°C 250 200 25°C 150 100 50 -55° 10m - ...

Page 6

Issue 1 - August 2008 © Diodes Incorporated 2008 Intentionally left blank 6 ZXTP03200BG www.zetex.com www.diodes.com ...

Page 7

Package Information – SOT223 DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 D 6.30 6.70 Issue 1 - August 2008 © Diodes Incorporated 2008 Inches DIM Min Max - ...

Page 8

Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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