2SK3113B-S15-AY NEC [NEC], 2SK3113B-S15-AY Datasheet - Page 5

• Manufacturer Part Number: 2SK3113B-S15-AY
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: NEC [NEC]

1000
1000
100
10
100
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
6
4
2
0
10
1
-50
0.1
0.1
V
f = 1 MHz
GS
V
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
T
DS
= 0 V
ch
- Drain to Source Voltage – V
- Channel Temperature - °C
0
I
D
- Drain Current - A
1
50
I
D
1
= 2.0 A
10
di/dt = 50 A/μs
V
GS
100
V
Pulsed
C
= 0 V
C
GS
1.0 A
rss
C
iss
= 10 V
oss
Data Sheet D18061EJ3V0DS
100
150
10
0.01
100
0.1
1000
10
600
500
400
300
200
100
100
1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
0.0
0
1
0.1
0
t
t
d(off)
d(on)
V
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
F(S-D)
GS
V
= 10 V
2
DD
Q
t
– Source to Drain Voltage - V
I
f
t
D
r
G
= 450 V
- Drain Current - A
– Gate Chage - nC
300 V
150 V
0.5
0 V
4
1
V
6
DS
V
V
V
R
2SK3113B
GS
DD
GS
G
I
D
1.0
Pulsed
= 10 Ω
= 2.0 A
8
= 150 V
= 10 V
10
10
10
9
8
7
6
5
4
3
2
1
0
5