2SK3113B-S15-AY NEC [NEC], 2SK3113B-S15-AY Datasheet - Page 3

• Manufacturer Part Number: 2SK3113B-S15-AY
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: NEC [NEC]

TYPICAL CHARACTERISTICS (T
100
0.01
80
60
40
20
100
0.1
0
10
0
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
1
FORWARD BIAS SAFE OPERATING AREA
I
D(DC)
20
Tc = 25°C, Single pulse
Power Dissipation Limited
R
(at V
V
I
T
D(pulse)
DS(on)
DS
40
ch
GS
- Drain to Source Voltage - V
- Channel Temperature - °C
Limited
= 10 V)
1000
60
0.01
100
10
0.1
10
1
100
80
μ
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
100 μs
1 m
120
1 ms
A
PW = 10 μs
= 25°C)
140
10 ms
10 m
160
Data Sheet D18061EJ3V0DS
1000
PW - Pulse Width – s
100 m
1
40
35
30
25
20
15
10
5
0
0
20
R
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
R
10
th(ch-A)
th(ch-C)
T
40
C
= 125°C/W
- Case Temperature - °C
= 6.25°C/W
60
100
Single pulse
80
100
1000
120
2SK3113B
140
160
3