HFI640 SEMIHOW [SemiHow Co.,Ltd.], HFI640 Datasheet - Page 4

• Manufacturer Part Number: HFI640
• Description: 200V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
-100
-1
-2
2
1
0
10
0
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
-50
T
V
Operation in This Area
is Limited by R
J
DS
, Junction Temperature [
vs Temperature
, Drain-Source Voltage [V]
0
10
10
10
* Notes :
-1
-2
10
10
1. T
2. T
3. Single Pulse
0
1
C
J
-5
DS(on)
= 150
= 25
D=0.5
50
0.2
0.1
0.05
0.02
0.01
o
C
o
C
Figure 11. Transient Thermal Response Curve
DC
(continued)
100 ms
10
100
single pulse
-4
10 ms
o
C]
* Note :
t
1
1. V
2. I
1 ms
, Square Wave Pulse Duration [sec]
D
10
GS
= 250 µA
150
2
= 0 V
100 µs
10
-3
200
10
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
-100
8
4
0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
P
※ Notes :
10
DM
1. Z
2. Duty Factor, D=t
3. T
-1
θ JC
JM
-50
(t) = 0.9 ℃/ W Max.
- T
50
C
= P
t
T
1
J
T
DM
t
10
, Junction Temperature [
2
C
vs Temperature
vs Case Temperature
0
, Case Temperature [ ℃]
* Z
0
1
/t
θ JC
75
2
(t)
50
10
100
1
100
o
C]
◎ SEMIHOW REV.A0,Mar 2008
125
∗ Note :
1. V
2. I
150
D
GS
= 1.0 A
= 10 V
200
150