HFI640 SEMIHOW [SemiHow Co.,Ltd.], HFI640 Datasheet - Page 3

• Manufacturer Part Number: HFI640
• Description: 200V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
2500
2000
1500
1000
500
0
10
-1
Figure 3. On Resistance Variation vs
Figure 5. Capacitance Characteristics
Figure 1. On Region Characteristics
Top:
Bottom:
Drain Current and Gate Voltage
15.0V
10.0V
V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
C
C
C
oss
iss
rss
C
C
C
iss
oss
rss
※ Notes
= C
= C
= C
1. 250us Pulse Test
2. T
10
※ Notes : T
gs
gd
ds
1
c
=25℃
+ C
+ C
※ Note ;
gd
gd
1. V
2. f = 1 MHz
(C
ds
GS
J
=25℃
= shorted)
= 0 V
12
10
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
8
V
V
Q
GS
SD
and Temperature
G
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
16
V
DS
V
DS
= 160V
V
= 100V
DS
= 40V
24
※ Notes
1. V
2. 250us Pulse Test
※ Notes
* Note : I
◎ SEMIHOW REV.A0,Mar 2008
1. V
2. 250us Pulse Test
DS
=40V
GS
32
=0V
D
= 18.0 A
40