M40SZ100WMH6E STMICROELECTRONICS [STMicroelectronics], M40SZ100WMH6E Datasheet - Page 11

• Manufacturer Part Number: M40SZ100WMH6E
• Description: 5 V or 3 V NVRAM supervisor for LPSRAM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M40SZ100Y, M40SZ100W
Figure 7.
Table 2.
1. Valid for ambient operating temperature: T
2. V
3. V
Symbol
t
V
t
t
t
t
t
t
FB
CER
REC
WPT
PFD
EPD
t
F
PFD
CC
PFD
t
RB
R
(2)
(3)
passes V
V CC
V PFD (max)
V PFD
V PFD (min)
E
E CON
RST
V SO
PFO
(max) to V
(min) to V
V
V
PFI to PFO propagation delay
V
Chip enable propagation delay (low or high)
V
Chip enable recovery
V
Write protect time
Power up timing
Power down/up AC characteristics
PFD
PFD
PFD
SS
PFD
PFD
to V
SS
(min) to V
PFD
(max) to V
(min) to V
(max) to RST high
(min).
fall time of less than t
PFD
(min) fall time of less than t
tRB
V OHB
(min) V
PFD
SS
PFD
V
(max) V
CC
CC
(min) V
fall time
rise time
FB
CC
CC
A
tR
may cause corruption of RAM data.
Parameter
rise time
= –40 to 85 °C; V
fall time
F
tCER
may result in deselection/write protection not occurring until 200 µs after
Doc ID 7528 Rev 3
tREC
(1)
CC
= 2.7 to 3.6 V or 4.5 to 5.5 V(except where noted).
tEPD
M40SZ100W
M40SZ100Y
VALID
Min
300
10
15
10
40
40
40
1
tEPD
Max
120
200
200
25
10
15
Operation
AI03937
Unit
ms
ms
µs
µs
µs
µs
ns
ns
µs
µs
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