M40Z300MH1E STMICROELECTRONICS [STMicroelectronics], M40Z300MH1E Datasheet
M40Z300MH1E
Related parts for M40Z300MH1E
M40Z300MH1E Summary of contents
Page 1
NVRAM supervisor for LPSRAMs Features ■ Converts low power SRAM into NVRAMs ■ Precision power monitoring and power switching circuitry ■ Automatic WRITE-protection when V of-tolerance ■ Two-input decoder allows control for up to ...
Page 2
Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 3
List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 4
List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 5
Description The M40Z300/W NVRAM SUPERVISOR is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the V When an invalid are forced inactive to ...
Page 6
Figure 1. Logic diagram 1. For 16-pin SOIC package only. Table 1. Signal names THS CON CON A, B RST BL V OUT – For M40Z300W, B– ...
Page 7
Figure 2. 28-pin SOIC connections V OUT NC NC RST THS V SS Figure 3. M40Z300 16-pin SOIC connections V OUT NC RST BL THS V SS Figure 4. M40Z300W 16-pin SOIC connections V ...
Page 8
Figure 5. Hardware hookup 3.0V, 3. OUT 0.1 F M40Z300 M40Z300W E1 CON A E2 CON B E3 CON E E4 CON Threshold THS RST the second chip enable pin ...
Page 9
Operation The M40Z300/W, as shown in parallel) standard low-power SRAMs. These SRAMs must be configured to have the chip enable input disable all other input signals. Most slow, low-power SRAMs are configured like this, however many fast SRAMs are ...
Page 10
Two to four decode The M40Z300/W includes a 2 input (A, B) decoder which allows the control independent SRAMs. The Truth Table for these inputs is shown in Table 2. Truth table Inputs E B ...
Page 11
SNAPHAT determine the amount of data retention available (see Caution: Take care to avoid inadvertent discharge through V been attached. For a further more detailed review of lifetime calculations, please see Application Note AN1012. 2.3 Power-on ...
Page 12
A ceramic bypass capacitor value of 0.1µF (as shown in Figure 7) is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate ...
Page 13
Maximum rating Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above ...
Page 14
DC and AC parameters This section summarizes the operating and measurement conditions, as well as the DC and AC characteristics of the device. The parameters in the following DC and AC Characteristic tables are derived from tests performed under ...
Page 15
Table 6. DC characteristics Sym Parameter Test condition (2) I Input leakage current LI I Supply current CC V Input low voltage IL V Input high voltage IH Output low voltage V Output low voltage OL (3) (open drain) V ...
Page 16
Figure 9. Power down timing PFD (max) V PFD V PFD (min CON - E4 CON RST Figure 10. Power up timing PFD (max) V PFD V PFD (min) ...
Page 17
Table 7. Power down/up mode AC characteristics Symbol Parameter ( (max (min PFD PFD ( (min PFD (min (max PFD ...
Page 18
Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...
Page 19
Table 8. SOH28 – 28-lead plastic small outline, battery SNAPHAT, package mechanical data mm Symbol Typ Min A A1 0.05 A2 2.34 B 0.36 C 0.15 D 17.71 E 8.23 e 1.27 eB 3.20 H 11. ...
Page 20
Figure 12. SH – 4-pin SNAPHAT housing for 48mAh battery, package outline Note: Drawing is not to scale. Table 9. SH – 4-pin SNAPHAT housing for 48mAh battery, package mechanical data Symbol Typ ...
Page 21
Figure 13. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline Note: Drawing is not to scale. Table 10. SH – 4-pin SNAPHAT housing for 120mAh battery, package mechanical data Symbol Typ ...
Page 22
Figure 14. SO16 – 16-lead plastic small outline, 150 mils body width, package outline Note: Drawing is not to scale. Table 11. SO16 – 16-lead plastic small outline, 150 mils body width, package mechanical data Symbol ...
Page 23
Part numbering Table 12. Ordering information example Example: Device type M40Z Supply and write protect voltage 300 = V = 4.5 to 5.5V CC THS = V = 4.5V SS THS = V = 4.2V OUT 300W = V ...
Page 24
Revision history Table 14. Document revision history Date Revision Mar-1999 08-Mar-2000 22-Sep-2000 23-Feb-2001 30-May-2001 10-Jul-2001 01-Aug-2001 15-Jan-2002 13-May-2002 31-Oct-2003 04-Nov-2003 23-Feb-2005 05-Nov-2007 24/25 1.0 First Issue Document Layout changed; SO16 package added; Battery Capacity 1.1 changed (Table 13) 1.2 ...
Page 25
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...