M40Z111WMH6F STMICROELECTRONICS [STMicroelectronics], M40Z111WMH6F Datasheet

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M40Z111WMH6F

Manufacturer Part Number
M40Z111WMH6F
Description
5V or 3V NVRAM supervisor for up to two LPSRAMs
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Features
November 2007
Convert low power SRAMs into NVRAMs
Precision power monitoring and power
switching circuitry
Automatic write-protection when V
tolerance
Choice of supply voltages and
power-fail deselect voltages:
– M40Z111: V
– M40Z111W: V
Less than 15ns chip enable access
propagation delay (for 5.0v device)
Packaging includes a 28-lead SOIC and
SNAPHAT
SOIC package provides direct connection for a
SNAPHAT top which contains the battery
RoHS compliant
– Lead-free second level interconnect
THS = V
THS = V
THS = V
V
THS = V
CC
= 2.7 to 3.3V
®
OUT
OUT
SS
SS
top (to be ordered separately)
; 4.5
; 2.8
CC
; 4.2
; 2.5
CC
= 4.5 to 5.5V
5V or 3V NVRAM supervisor for up to two LPSRAMs
= 3.0 to 3.6V
V
V
V
V
PFD
PFD
PFD
PFD
4.75V
3.0V
4.5V
2.7V
CC
is out-of-
Rev 4
28
SNAPHAT (SH)
SOH28 (MH)
battery
1
M40Z111W
M40Z111
www.st.com
1/21
1

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M40Z111WMH6F Summary of contents

Page 1

NVRAM supervisor for up to two LPSRAMs Features ■ Convert low power SRAMs into NVRAMs ■ Precision power monitoring and power switching circuitry ■ Automatic write-protection when V tolerance ■ Choice of supply voltages and power-fail deselect ...

Page 2

Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

Description The M40Z111/W NVRAM supervisor is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the V condition. When an invalid V CC inactive to write-protect the stored ...

Page 6

Table 1. Signal names THS E E CON V OUT Figure 2. SOIC28 connections 6/21 Threshold select input Chip enable input Conditioned chip enable output Supply voltage output Supply voltage Ground Not connected internally V ...

Page 7

Figure 3. Hardware hookup 3.0, 3. 1N5817 or 0.1 F MBR5120T3 Thereshold OUT 0.1 F M40Z111/W E CON E THS CMOS SRAM x16 AI02394 7/21 ...

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Operation The M40Z111/W, as shown in SRAMs. These SRAMs must be configured to have the chip enable input disable all other input signals. Most slow, low-power SRAMs are configured like this, however many fast SRAMs are not. During normal ...

Page 9

The available battery capacity for the SNAPHAT current to determine the amount of data retention available (see more information on Battery Storage Life refer to the Application Note AN1012. Figure 4. Power down timing PFD (max) V ...

Page 10

Table 2. Power down/up AC characteristics Symbol ( (max PFD ( (min PFD t V (min PFD Chip enable propagation ...

Page 11

Figure 6. Supply voltage protection 0.1 F DEVICE V SS AI00622 11/21 ...

Page 12

Maximum rating Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above ...

Page 13

DC and AC parameters This section summarizes the operating and measurement conditions, as well as the DC and AC characteristics of the device. The parameters in the following DC and AC Characteristic tables are derived from tests performed under ...

Page 14

Table 6. DC characteristics Sym Parameter I Supply current CC Data retention mode I CCDR current I Input leakage current LI (2) I Output leakage current current (active) OUT1 OUT V current (battery OUT I OUT2 back-up) ...

Page 15

Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...

Page 16

Table 7. SOH28 – 28-lead plastic small outline, battery SNAPHAT, pack. mech. data Symbol Typ 1. 16/21 mm Min Max Typ 3.05 0.05 0.36 2.34 2.69 ...

Page 17

Figure 9. 4-pin SNAPHAT housing for 48mAh battery, package outline Note: Drawing is not to scale. Table 8. 4-pin SNAPHAT housing for 48mAh battery, package mechanical data Symbol Typ ...

Page 18

Figure 10. 4-pin SNAPHAT housing for 120mAh battery, package outline Note: Drawing is not to scale. Table 9. 4-pin SNAPHAT housing for 120mAh battery, package mechanical data Symbol Typ 18/21 ...

Page 19

Part numbering Table 10. Ordering information scheme Example: Device type M40Z Supply voltage and write protect voltage 111 = V = 4.5 to 5.5V THS = V = 4.5 SS THS = V = 4.2 OUT 111W ...

Page 20

Revision history Table 12. Document revision history Date Revision Sep-2000 14-Sep-2001 13-May-2002 12-Nov-2007 20/21 1 First Draft Issue Reformatted, TOC added, changed DC Characteristics changed battery, ind. temperature information 2 Figure 9, 10); Corrected SOIC label (Figure 3) 3 ...

Page 21

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...

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