MCF52223 FREESCALE [Freescale Semiconductor, Inc], MCF52223 Datasheet - Page 32

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MCF52223

Manufacturer Part Number
MCF52223
Description
Microcontroller Data Sheet
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet

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Preliminary Electrical Characteristics
2.4
The Flash memory characteristics are shown in
2.5
32
NOTES:
1
System clock (read only)
System clock (program/erase)
NOTES:
1
2
Refer to the Flash section for more information
Maximum number of guaranteed program/erase cycles
Data retention at average operating temperature of 85°C
A program/erase cycle is defined as switching the bits from 1 → 0 → 1.
Reprogramming of a Flash array block prior to erase is not required.
Flash Memory Characteristics
ESD Protection
NOTES:
1
2
ESD Target for Human Body Model
ESD Target for Machine Model
HBM Circuit Description
MM Circuit Description
Number of pulses per pin (HBM)
positive pulses
negative pulses
Number of pulses per pin (MM)
positive pulses
negative pulses
Interval of Pulses
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
A device is defined as a failure if after exposure to ESD pulses the device no longer meets
the device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Parameter
Table 21. SGFM Flash Program and Erase Characteristics
Characteristics
1
MCF52223 ColdFire® Microcontroller Data Sheet, Rev. 1
Table 22. SGFM Flash Module Life Characteristics
Parameter
Table 23. ESD Protection Characteristics
(V
(V
DDF
DDF
Preliminary
Table 21
= 2.7 to 3.6 V)
= 2.7 to 3.6 V)
1
before failure
Symbol
f
sys(P/E)
Symbol
f
R
R
sys(R)
HBM
MM
series
series
C
C
and
Table
0.15
Min
Value
0
2000
1500
200
100
200
22.
0
1
1
3
3
1
Retention
Symbol
P/E
1, 2
Typ
Units
ohms
ohms
sec
pF
pF
V
V
10,000
Freescale Semiconductor
Value
10
Max
80
80
2
Cycles
Years
Unit
MHz
MHz
Unit

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