MCF51QM128VHS FREESCALE [Freescale Semiconductor, Inc], MCF51QM128VHS Datasheet - Page 31

• Manufacturer Part Number: MCF51QM128VHS
• Description: MCF51QM128
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_FlexRAM =
where
Freescale Semiconductor, Inc.
• Writes_FlexRAM — minimum number of writes to each FlexRAM location
• EEPROM — allocated FlexNVM based on DEPART; entered with Program
• EEESIZE — allocated FlexRAM based on DEPART; entered with Program Partition
• Write_efficiency —
• n
Partition command
command
nvmcycd
• 0.25 for 8-bit writes to FlexRAM
• 0.50 for 16-bit or 32-bit writes to FlexRAM
— data flash cycling endurance
EEPROM – 2 × EEESIZE
EEESIZE
MCF51QM128 Data Sheet, Rev. 6, 01/2012.
× Write_efficiency × n
nvmcycd
Memories and memory interfaces
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