MCF51QM128VHS FREESCALE [Freescale Semiconductor, Inc], MCF51QM128VHS Datasheet - Page 29

• Manufacturer Part Number: MCF51QM128VHS
• Description: MCF51QM128
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Freescale Semiconductor, Inc.
t
t
t
t
t
t
t
t
t
t
t
t
eewr16b16k
eewr16b32k
eewr32b16k
eewr32b32k
eewr16bers
eewr32bers
t
Symbol
t
eewr8b16k
eewr8b32k
eewr16b8k
eewr32b8k
setram32k
eewr8bers
t
eewr8b8k
setram8k
setramff
I
Symbol
DD_PGM
Set FlexRAM Function execution time:
Byte-write to erased FlexRAM location execution
time
Byte-write to FlexRAM execution time:
Word-write to erased FlexRAM location
execution time
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Description
• Control Code 0xFF
• 8 KB EEPROM backup
• 32 KB EEPROM backup
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
Table 18. Flash command timing specifications (continued)
Worst case programming current in program flash
Description
Table 19. Flash (FTFL) current and power specfications
Longword-write to FlexRAM for EEPROM operation
MCF51QM128 Data Sheet, Rev. 6, 01/2012.
Word-write to FlexRAM for EEPROM operation
Byte-write to FlexRAM for EEPROM operation
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
175
340
385
475
175
340
385
475
360
545
630
810
0.3
0.7
50
Memories and memory interfaces
1700
1800
2000
1700
1800
2000
1950
2050
2250
Max.
Typ.
260
260
540
0.5
1.0
10
—
Unit
ms
ms
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Unit
mA
Notes
3
29