FLC257MH-6 EUDYNA [Eudyna Devices Inc], FLC257MH-6 Datasheet
FLC257MH-6
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FLC257MH-6 Summary of contents
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... High PAE: η add = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...
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... FLC257MH-6 C-Band Power GaAs FET POWER DERATING CURVE 100 150 200 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER +10V ≈ 0.6 I DSS f = 6.4 GHz 33 P out Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...
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... Download S-Parameters, click here 3 FLC257MH +90° 5.5 6.5 5GHz 0° 7.5 7.5 .02 8 .04 .06 .08 -90° S22 MAG ANG .351 -157.1 .719 -163.9 .751 -167 ...
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... FLC257MH-6 C-Band Power GaAs FET 2-ø1.8±0.15 (0.071) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...