FLL1200IU-3 EUDYNA [Eudyna Devices Inc], FLL1200IU-3 Datasheet
![no-image](/images/no-image-200.jpg)
FLL1200IU-3
Related parts for FLL1200IU-3
FLL1200IU-3 Summary of contents
Page 1
... Broad Frequency Range: 2400 to 2500 MHz. • Suitable for class AB operation. DESCRIPTION The FLL1200IU 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers ...
Page 2
... FLL1200IU-3 L-Band High Power GaAs FET POWER DERATING CURVE 200 150 100 100 Ambient Temperature (° OUTPUT POWER & η add vs. INPUT POWER 12V 5. 2.5GHz 150 200 OUTPUT POWER vs. FREQUENCY ...
Page 3
... FLL1200IU-3 S22 MAG ANG .894 166.2 .883 165.0 .868 163.6 .853 162.3 .837 161.3 .819 160.2 .801 158.8 .780 157.4 .760 155.9 .734 153.8 .699 151 ...
Page 4
... FLL1200IU-3 L-Band High Power GaAs FET 12-R0.5 6 4-R1.3 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...