FLC157XP EUDYNA [Eudyna Devices Inc], FLC157XP Datasheet
FLC157XP
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FLC157XP Summary of contents
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... High PAE: η add = 29.5%(Typ.) • Proven Reliability DESCRIPTION The FLC157XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...
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... FLC157XP GaAs FET & HEMT Chips POWER DERATING CURVE 100 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER V DS =10V 32 f=4GHz I DS ≈0.6I DSS out 26 f=4GHz 24 22 η add Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...
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... Download S-Parameters, click here 3 FLC157XP S22 MAG ANG .185 -39.7 .293 -115.6 .337 -139.9 .375 -150.6 .413 -152.6 .456 -153.5 .503 -154.9 .550 -156.8 .597 -159.3 .641 -162.2 .682 -165.4 ...
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... FLC157XP GaAs FET & HEMT Chips 155 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...