TSI200B1 STMICROELECTRONICS [STMicroelectronics], TSI200B1 Datasheet - Page 6

• Manufacturer Part Number: TSI200B1
• Description: TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

TSIxxB1
ABSOLUTE MAXIMUM RATINGS (T
Note 1 : Pulse waveform :
ELECTRICAL CHARACTERISTICS (T
6/9
THERMAL RESISTANCE
Symbol
Symbol
Symbol
R
I
T
I
TSM
th(j-a)
T
V
V
V
PP
I
T
I
I
I
stg
F
I
BO
RM
PP
C
L
RM
BO
j
BR
H
T
10/1000 s
5/310 s
2/10 s
Junction to ambient
Non repetitive peak on-sate current (see note 1)
10/1000 s (open circuit voltage wave shape 10/100 s)
5/310 s (open circuit voltage wave shape 10/700 s)
2/10 s (open circuit voltage wave shape 2/10 s)
Maximum DC current
Non repetitive surge peak on-state current
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s
Stand-off voltage
Breakover voltage
Breakdown voltage
Holding current
Breakover current
Leakage current at V
Peak pulse current
Capacitance
Temperature coefficient
t r =10 s
t r =5 s
t r =2 s
Parameter
t p =1000 s
t p =310 s
t p =10 s
RM
amb
amb
Parameter
= 25°C)
Parameter
=25°C)
100
50
0
% I
PP
tp = 20 ms
t = 1s
t
r
I
I
I
BO
RM
PP
I
H
t
p
I
- 55 to +150
Value
150
260
0.2
3.5
30
40
75
Value
5
170
V
RM
Unit
°C/W
°C
°C
Unit
t
A
A
A
V
BO
V