FLC087XP EUDYNA [Eudyna Devices Inc], FLC087XP Datasheet
FLC087XP
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FLC087XP Summary of contents
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... High PAE: η add = 31.5%(Typ.) • Proven Reliability DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...
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... FLC087XP GaAs FET & HEMT Chips POWER DERATING CURVE 100 150 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER =10V f=4GHz I DS ≈0.6I DSS 28 P out 26 24 f=4GHz 22 20 η add Input Power (dBm) DRAIN CURRENT vs ...
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... Download S-Parameters, click here 3 FLC087XP S22 MAG ANG .510 -4.7 .467 -21.1 .399 -34.2 .355 -42.2 .332 -48.2 .323 -53.7 .320 -59.0 .323 -64.3 .330 -69.7 .338 -74.9 .349 -80.2 .362 -85.3 .375 -90.4 .390 -95.3 .406 -100.2 .422 -105 ...
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... FLC087XP GaAs FET & HEMT Chips For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...