L200BB55RD AMD [Advanced Micro Devices], L200BB55RD Datasheet - Page 27

• Manufacturer Part Number: L200BB55RD
• Description: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
2. Maximum I
3. I
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
5. Not 100% tested.
October 10, 2006 21521D6
Parameter
CC
V
V
V
I
I
I
I
I
V
I
V
V
I
CC1
CC2
CC3
CC4
CC5
V
OH1
OH2
I
LIT
LKO
LO
OL
LI
IH
ID
IL
active while Embedded Erase or Embedded Program is in progress.
CC
current listed is typically less than 2 mA/MHz, with OE# at V
CC
Input Load Current
A9 Input Load Current
Output Leakage Current
V
(Notes 1, 2)
V
(Notes 2, 3, and 5)
V
V
Automatic Sleep Mode (Notes 2,
4)
Input Low Voltage
Input High Voltage
Voltage for Autoselect and
Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Low V
(Note 5)
CC
CC
CC
CC
specifications are tested with V
Active Read Current
Active Write Current
Standby Current (Note 2)
Reset Current (Note 2)
CC
Lock-Out Voltage
Description
CC
V
V
V
V
V
CE# = V
Byte Mode
CE# = V
Word Mode
CE# = V
CE#, RESET# = V
RESET# = V
V
V
V
I
I
I
OL
OH
OH
OUT
IN
CC
CC
CC
IH
IL
CC
= V
= V
D A T A S H E E T
= 4.0 mA, V
= V
= V
= –2.0 mA, V
= –100 µA, V
= V
= V
= V
= 3.3 V
= V
Am29LV200B
CCmax
SS
SS
CC
Test Conditions
CC max
CC max
CC max
IL,
IL,
IL,
SS
± 0.3 V
to V
± 0.3 V;
OE#
OE#
OE#
to V
.
SS
CC
; A9 = 12.5 V
CC
± 0.3 V
=
=
=
CC
,
CC
CC
V
V
V
CC
= V
,
IH,
IH,
IH
= V
= V
±0.3 V
CC min
IH
CC min
CC min
. Typical V
5 MHz
1 MHz
5 MHz
1 MHz
CC
0.7 x V
0.85 V
V
is 3.0 V.
CC
–0.5
11.5
Min
2.3
–0.4
ACC
CC
CC
+ 30 ns.
Typ
0.2
0.2
0.2
15
7
2
7
2
V
CC
Max
±1.0
±1.0
12.5
0.45
0.8
2.5
35
12
12
30
4
4
5
5
5
+ 0.3
Unit
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
25