TPS850_07 TOSHIBA [Toshiba Semiconductor], TPS850_07 Datasheet - Page 2

• Manufacturer Part Number: TPS850_07
• Description: Photo-IC Silicon Epitaxial Planar
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical and Optical Characteristics
Supply voltage
Supply current
Light current (1)
Light current (2)
Light current (3)
Light current ratio
Dark current
Saturation output voltage
Peak sensitivity wavelength
Switching time
Note 2: CIE standard A light source is used (color temperature = 2856K, approximated incandescence light).
Note 3: Fluorescence light is used as light source. However, white LED is substituted in a mass-production process.
Note 4: Light current measurement circuit
Note 5: Rise time/fall time measurement method
Pulse drive
Characteristics
White LED
Rise time
Fall time
source
Light
TPS850
Symbol
TPS850
L I
L I
I
I
I
I
V
LEAK
L
L
L
I
Vo
λ
CC
CC
t
t
(1)
(2)
(3)
(1)
(3)
p
r
f
V
CC
V
CC
V
R
V
V
V
V
V
E
V
I
(Ta = 25°C)
CC
CC
CC
CC
CC
CC
V
CC
L
L
R
= 250 Ω
= 100 lx
L
A
= 3 V, E
= 3 V, E
= 3 V, E
= 3 V, E
= 3.3 V, E
= 3 V, R
= 3 V, R
OUT
2
Test Condition
OUT
V
V
V
V
L
L
⎯
⎯
V
= 75 k Ω,
= 5 k Ω ,
= 1000 lx,
= 100 lx
= 10 lx
= 100 lx
= 0
GND
(Note 2, 4)
(Note 3, 4)
(Note 3, 4)
V
(Note 2)
(Note 3)
(Note 5)
OUT
I
1.5 V
F
180
Min
2.7
2.2
t
⎯
⎯
18
⎯
⎯
⎯
⎯
⎯
r
Typ.
2.35
0.35
300
230
640
1.3
0.2
23
⎯
⎯
4
t
f
Max
300
5.5
1.7
0.5
⎯
30
⎯
⎯
⎯
1
2
90%
10%
2007-10-01
Unit
mA
nm
μA
μ A
ms
TPS850
V
V