AP2138N-1.2TRG1 BCDSEMI [BCD Semiconductor Manufacturing Limited], AP2138N-1.2TRG1 Datasheet - Page 7

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AP2138N-1.2TRG1

Manufacturer Part Number
AP2138N-1.2TRG1
Description
ULTRA LOW QUIESCENT CURRENT CMOS LDO
Manufacturer
BCDSEMI [BCD Semiconductor Manufacturing Limited]
Datasheet

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Quantity:
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Electrical Characteristics
AP2138/2139-1.2 Electrical Characteristics
(V
otherwise specified.)
Jul. 2011 Rev. 2. 0
ULTRA LOW QUIESCENT CURRENT CMOS LDO
Parameter
Input Voltage
Output Voltage
Quiescent Current
Standby Current (AP2139)
Output Current
Load Regulation
Line Regulation
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
CE Pull-down Constant
Current (AP2139)
CE Input Logic-high
Voltage (AP2139)
CE Input Logic-low
Voltage (AP2139)
Thermal Resistance
IN
=2.5V, V
CE
=2.5V (AP2139),T
J
=25
(∆V
o
C, I
OUT
∆V
V
Symbol
V
I
V
OUT
V
SHORT
I
RLOAD
I
RLINE
V
OUT
V
DROP
V
OUT
I
θ
STD
/V
OUT
I
PD
Q
JC
IN
IH
IL
=40mA, C
OUT
/∆T
)/∆T
IN
7
=C
I
V
1mA≤I
2.2V≤V
I
I
I
I
V
SOT-23-3
SOT-23-5
SOT-89
OUT
OUT
OUT
OUT
OUT
CE
OUT
OUT
=0
=0
=10mA
=30mA
=100mA
=250mA
Conditions
=0
=1µF, Bold typeface applies over -40
OUT
IN
≤6V
≤100mA
BCD Semiconductor Manufacturing Limited
1.176
Min
250
1.2
Preliminary Datasheet
1.200
±
±
1000
81.9
81.9
51.1
Typ
100
400
700
1.0
0.1
0.2
25
50
140
100
6
AP2138/2139
o
C≤T
1.224
1000
1300
Max
300
700
6.6
0.3
1.5
40
18
1
J
≤85
o
ppm/
C, unless
µV/
o
Unit
mA
mV
mV
mV
mA
C/W
µA
µA
µA
V
V
V
V
o
o
C
C

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