AP2138N-1.2TRG1 BCDSEMI [BCD Semiconductor Manufacturing Limited], AP2138N-1.2TRG1 Datasheet - Page 13

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AP2138N-1.2TRG1

Manufacturer Part Number
AP2138N-1.2TRG1
Description
ULTRA LOW QUIESCENT CURRENT CMOS LDO
Manufacturer
BCDSEMI [BCD Semiconductor Manufacturing Limited]
Datasheet

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Part Number:
AP2138N-1.2TRG1
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Part Number:
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Quantity:
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Electrical Characteristics (Continued)
AP2138/2139-3.0 Electrical Characteristics
(V
erwise specified.)
Jul. 2011 Rev. 2. 0
ULTRA LOW QUIESCENT CURRENT CMOS LDO
Parameter
Input Voltage
Output Voltage
Quiescent Current
Standby Current (AP2139)
Output Current
Load Regulation
Line Regulation
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
CE Pull-down Constant
Current (AP2139)
CE Input Logic-high
Voltage (AP2139)
CE Input Logic-low
Voltage (AP2139)
Thermal Resistance
IN
=4V, V
CE
=4V (AP2139), T
J
=25
o
C, I
(∆V
OUT
OUT
∆V
V
Symbol
V
I
V
V
SHORT
I
RLOAD
=40mA, C
I
RLINE
V
OUT
V
DROP
V
OUT
I
θ
STD
/V
OUT
I
PD
Q
JC
IN
IH
IL
OUT
/∆T
)/∆T
IN
=C
OUT
13
I
V
1mA≤I
4V≤V
I
I
I
I
V
SOT-23-3
SOT-23-5
SOT-89
OUT
OUT
OUT
OUT
OUT
CE
OUT
=1µF, Bold typeface applies over -40
=0
=0
=10mA
=30mA
=100mA
=250mA
Conditions
=0
IN
OUT
≤6V
≤100mA
BCD Semiconductor Manufacturing Limited
2.940
Min
250
1.2
Preliminary Datasheet
3.000
±
±
81.9
81.9
51.1
Typ
200
450
1.0
0.1
0.2
25
25
70
50
300
100
6
o
C≤T
AP2138/2139
3.060
J
Max
100
200
400
700
≤85
6.6
0.3
1.5
40
18
1
o
C, unless oth-
ppm/
µV/
o
mV
Unit
mA
mV
mV
mA
C/W
µA
µA
µA
V
V
V
V
o
o
C
C

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