BD62013FS ROHM [Rohm], BD62013FS Datasheet - Page 18

• Manufacturer Part Number: BD62013FS
• Description: Three phase brushless fan motor controller
• Manufacturer: ROHM [Rohm]

 Notes for use
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a
reference to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
http://www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 · 15 · 001
BD62013FS
1) Absolute maximum ratings
2) Electrical potential at GND
3) Driver outputs
4) Thermal design
5) Inter-pin shorts and mounting errors
6) Operation in strong electromagnetic fields
7) Testing on application boards
8) Regarding the input pin of the IC
Devices may be destroyed when supply voltage or operating temperature exceeds the absolute maximum rating. Because
the cause of this damage cannot be identified as, for example, a short circuit or an open circuit, it is important to consider
circuit protection measures - such as adding fuses - if any value in excess of absolute maximum ratings is to be
implemented.
Keep the GND terminal potential to the minimum potential under any operating condition. In addition, check to determine
whether there is any terminal that provides voltage below GND, including the voltage during transient phenomena.
However, note that even if the voltage does not fall below GND in any other operating condition, it can still swing below
GND potential when the motor generates back electromotive force at the RCL terminal. The chip layout in this product is
designed to avoid this sort of electrical potential problem, but pulling excessive current may still result in malfunctions.
Therefore, it is necessary to observe operation closely to conclusively confirm that there is no problem in actual operation.
If there are a small signal GND and a high current GND, it is recommended to separate the patterns for the high current
GND and the small signal GND and provide a proper grounding to the reference point of the set not to affect the voltage at
the small signal GND with the change in voltage due to resistance component of pattern wiring and high current. Also for
GND wiring pattern of the component externally connected, pay special attention not to cause undesirable change to it.
The high voltage semiconductor generally driven by this product is connected to the next stage via the controller. If any
special mode in excess of absolute maximum ratings is to be implemented with this product or its application circuits, it is
important to take physical safety measures, such as providing voltage clamping diodes or fuses.
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together. Also, connecting the power supply in reverse polarity can damage the IC.
Take precautions against reverse polarity when connecting the power supply lines, such as establishing an external diode
between the power supply and the IC power supply pin.
Using this product in strong electromagnetic fields may cause IC malfunctions. Use extreme caution with electromagnetic
fields.
When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic element
Pin A
N P
+
N
GND
P
P substrate
P
+
Resistor
N
Pin A
Appendix: Example of monolithic IC structure
Parasitic
element
18/20
Parasitic element
Pin B
N
P
+
C
B
N
GND
E
P
P substrate
Transistor (NPN)
P
+
N
TSZ02201-0828ABB00030-1-2
GND
01.JUN.2012 Rev.001
Other adjacent elements
Pin B
B
GND
C
E
Datasheet
Datasheet
Parasitic
element