VNH5019A-E STMICROELECTRONICS [STMicroelectronics], VNH5019A-E Datasheet - Page 19

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VNH5019A-E

Manufacturer Part Number
VNH5019A-E
Description
Automotive fully integrated H-bridge motor driver
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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VNH5019A-E
2.5
Reverse battery protection
Against reverse battery condition the charge pump feature allows to use an external
N-channel MOSFET connected as shown in the typical application circuit (see
As alternative option, a N-channel MOSFET connected to GND pin can be used (see typical
application circuit in figure
With this configuration we recommend to short V
The device sustains no more than -30 A in reverse battery conditions because of the two
body diodes of the Power MOSFETs. Additionally, in reverse battery condition the I/Os of
VNH5019A-E is pulled-down to the V
inserted to limit the current sunk from the microcontroller I/Os. If I
target reverse current through microcontroller I/Os, series resistor is:
Figure 7.
V
PWM
V
I
LOAD
INA,
INB
Definition of the delay times measurement
t
DEL
Figure 5
Doc ID 15701 Rev 8
).
R
CC
=
line (approximately -1.5 V). Series resistor must be
V IOs V CC
------------------------------- -
I Rmax
BAT
pin to V
t
DEL
CC
.
Rmax
Electrical specifications
is the maximum
Figure 4
t
t
t
t
19/37
).

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