STP22NE03 STMICROELECTRONICS [STMicroelectronics], STP22NE03 Datasheet - Page 3

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STP22NE03

Manufacturer Part Number
STP22NE03
Description
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Symbol
Symbol
Symbol
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
G
G
=4.7
=4.7
= 22 A
= 22 A
= 15 V
= 24 V
= 24 V
= 15 V
Test Conditions
Test Conditions
Test Conditions
V
V
GS
I
I
GS
D
T
D
di/dt = 100 A/ s
V
j
= 22 A
= 5 V
= 22 A
= 150
GS
= 0
I
D
= 11 A
= 5 V
o
C
V
GS
= 5 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
2.2
15
70
13
13
33
55
40
44
6
6
STP22NE03L
Max.
Max.
Max.
100
1.5
20
18
18
46
77
22
88
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/5

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