M54583WP MITSUBISHI [Mitsubishi Electric Semiconductor], M54583WP Datasheet

M54583WP

Manufacturer Part Number

M54583WP

Description

8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY

Manufacturer

MITSUBISHI [Mitsubishi Electric Semiconductor]

Datasheet

1.M54583WP.pdf (5 pages)

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ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

M54583WP is

Darlington transistor arrays. The circuits are made of PNP

and NPN transistors. Both the semiconductor integrated

circuits perform high-current driving with extremely low

input-current supply.

FEATURES

● High breakdown voltage (BV

● High-current driving (I

● Active L-level input

● With input clamping diodes

APPLICATIONS

Interfaces between microcomputers and high-voltage,

high current drive systems, drives of relays and printers,

and MOS-bipolar logic IC interfaces

FUNCTION

The M54583 is produced by adding PNP transistors to

M54523 inputs. Eight circuits having active L-level inputs

are provided.

Resistance of 7kΩ and diode are provided in series

between each input and PNP transistor base. The input

diode is intended to prevent the flow of current from the

input to the V

“H” input to the V

in such case where one of the inputs of the 8 circuits is

“H” and the others are “L” to save power consumption.

The diode is inserted to prevent such misoperation.

This device is most suitable for a driver using NMOS IC

output especially for the driver of current sink.

Collector current is 400mA maximum. Collector-emitter

supply voltage is 50V.

Symbol

opr

stg

CEO

Supply voltage

Collector-emitter voltage

Input voltage

Collector current

Power dissipation

Operating temperature

Storage temperature

eight-circuit collector-current

. Without this diode, the current flow from

and the “L” input circuits is activated,

Parameter

(max) = 400mA)

CEO

(Unless otherwise noted, Ta = –20 ~ +75℃)

> 50V)

sink type

Output , H

Current per circuit output, L

Ta = 25℃, when mounted on board

MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>

8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY

Conditions

PIN CONFIGURATION

CIRCUIT DIAGRAM

INPUT

The diode, indicated with the dotted line, is parasitic, and

cannot be used.

The eight circuits share the V

INPUT

GND

Package type 18P4X

IN1→

IN2→

IN3→

IN4→

IN5→

IN6→

IN7→

IN8→

2.7K

M54583WP

7.2K

– 55 ～ + 125

– 0.5 ～ + 50

– 0.5 ～ V

– 20 ～ + 75

Ratings

and GND.

1.79

400

18 →O1

→O2

→O3

→O4

→O5

→O6

→O7

→O8

Vcc

OUTPUT

Vcc

OUTPUT

GND

Unit:Ω

Jul-2011

Unit

℃

Related parts for M54583WP

M54583WP Summary of contents

Page 1

... DESCRIPTION M54583WP is eight-circuit collector-current Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ● High breakdown voltage (BV > 50V) CEO ● High-current driving (I (max) = 400mA) C ● ...

Page 2

... 25℃ Test conditions C = 15pF（note 1） L TIMING DIAGRAM INPUT R L OUTPUT OUTPUT 50Ω 0 30Ω 10V , M54583WP Unit max 8 V 350 mA 200 -3 Limits ＊ min typ max －－ 50 － 1.2 2.2 － ...

Page 3

... Ta=-20℃ Ta=75℃ –V ( M54583WP Output Saturation Voltage Ta=75℃ Ta=25℃ Ta=-20℃ 0.5 1.0 1.5 2.0 (V) CE(sat) ① ② ③ ④ ⑤ ⑥ ⑦ ⑧ 100 Duty cycle (%) DC Amplification Factor =5V =4V Ta=75℃ Ta=25℃ ...

Page 4

... V = =4V CE 300 Ta=75℃ Ta=25℃ 200 Ta=-20℃ 100 Supply voltage-Input voltage V –V ( 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY Supply Current Characteristics Ta=-20℃ Ta=25℃ Supply Voltage M54583WP Ta=75℃ (V) Jul-2011 ...

Page 5

... PACKAGE OUTLINE 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY 5 M54583WP Jun-2011 ...

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