M54522P_11 MITSUBISHI [Mitsubishi Electric Semiconductor], M54522P_11 Datasheet
M54522P_11
Manufacturer Part Number
M54522P_11
Description
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
1.M54522P_11.pdf
(4 pages)
DESCRIPTION
M54522P and M54522FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and interfaces between microcom-
puter output and high-current or high-voltage systems
FUNCTION
The M54522P and M54522FP each have eight circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20k
A spike-killer clamping diode is provided between each out-
put pin (collector) and COM pin. The output transistor emit-
ters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54522FP is enclosed in a molded small flat package,
enabling space-saving design.
High breakdown voltage (BV
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75 C)
between input transistor bases and input pins.
CEO
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
40V)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PIN CONFIGURATION
CIRCUIT DIAGRAM
INPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
INPUT
INPUT
Package type 20P2N-A(FP)
The eight circuits share the COM and GND.
Package type 18P4G(P)
20K
GND
GND
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
NC
20K
M54522P/FP
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
2K
18
17
16
15
14
13
12
11
10
20
19
18
17
16
15
14
13
12
11
NC
O1
O2
O3
O4
O5
O6
O7
O8
COM COMMON
O1
O2
O3
O4
O5
O6
O7
O8
COM
NC : No connection
OUTPUT
OUTPUT
COMMON
GND
COM
OUTPUT
Unit :
Aug. 1999
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M54522P_11 Summary of contents
Page 1
DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current ...
Page 2
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted –20 ~ +75 C) Symbol Parameter V Collector-emitter voltage CEO I Collector current C V Input voltage I I Clamping diode forward current F V Clamping diode reverse voltage R P Power ...
Page 3
NOTE 1 TEST CIRCUIT INPUT Measured device PG 50 (1) Pulse generator (PG) characteristics : PRR = 1kHz 6ns 6ns (2) Input-output ...
Page 4
DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Duty-Cycle-Collector Characteristics (M54522FP) 500 400 300 200 •The collector current values represent the current per circuit. 100 •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated ...