NIS5112_07 ONSEMI [ON Semiconductor], NIS5112_07 Datasheet

no-image

NIS5112_07

Manufacturer Part Number
NIS5112_07
Description
Electronic Fuse
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
NIS5112
Electronic Fuse
FET driven by an internal charge pump. This switch features a
SENSEFETt which allows for current sensing using inexpensive
chip resistors instead of expensive, low impedance current shunts.
thermal protection circuit.
Features
Typical Applications
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
The NIS5112 is an integrated switch utilizing a high side N−channel
It is designed to operate in 12 V systems and includes a robust
Integrated Power Device
Power Device Thermally Protected
No External Current Shunt Required
Enable/Timer Pin
Adjustable Slew Rate for Output Voltage
9 V to 18 V Input Range
30 mW Typical
Internal Charge Pump
ESD Ratings: Human Body Model (HBM); 4000 V
These are Pb−Free Devices
Hard Drives
Regulator
Voltage
Enable/Timer
Thermal
Enable/
Latch
Timer
3
V
Figure 1. Block Diagram
8
CC
Overvoltage
Charge
Clamp
Pump
GND
1
Current
Slew Rate
Limit
Voltage
dV/dt
2
1
Current Limit
4
Source
5, 6, 7
†For information on tape and reel specifications,
NIS5112D1R2G
NIS5112D2R2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8
Device
x
A
Y
WW
G
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
http://onsemi.com
= L for thermal latch off
= H for thermal auto−retry
= Assembly Location
= Year
= Work Week
= Pb−Free Package
SOIC−8 NB
CASE 751
Auto−Retry
(Pb−Free)
(Pb−Free)
Latch Off
Package
SOIC−8
SOIC−8
Publication Order Number:
8
1
Tape & Reel
Tape & Reel
MARKING
DIAGRAM
Shipping
AYWWG
2500 /
2500
NIS5112/D
112x
G

Related parts for NIS5112_07

NIS5112_07 Summary of contents

Page 1

NIS5112 Electronic Fuse The NIS5112 is an integrated switch utilizing a high side N−channel FET driven by an internal charge pump. This switch features a SENSEFETt which allows for current sensing using inexpensive chip resistors instead of expensive, low impedance ...

Page 2

Table 1. FUNCTIONAL PIN DESCRIPTION Pin Function 3 Enable/Timer A high level signal on this pin allows the device to begin operation. Connection of a capacitor will delay turn on for timing purposes. A low input signal inhibits the operation. ...

Page 3

Table 3. ELECTRICAL CHARACTERISTICS Characteristics POWER FET Delay Time (Enabling of Chip to Beginning of Conduction (10% of IPK)) Charging Time (Beginning of Conduction 1000 mF C dV/dt load ON Resistance ...

Page 4

NIS5112 100 100 R extILimit Figure 2. Current Limit Adjustment +12 V Current Limit NIS5112 Enable signal is compatible Enable/ with open collector devices Timer GND as well as most families. Enable GND (Typical operating conditions: ...

Page 5

NIS5112 Input Voltage Output Voltage Figure 4. Turn−on Waveforms for a Resistive Load Input Voltage Output Voltage Load Current ( dV/dt) Figure 5. Turn−on Waveforms for a Load Capacitance of 3,300 mf (C http://onsemi.com ...

Page 6

Input Voltage Figure 6. Turn−on Waveforms for an Overvoltage Condition (10 W Resistive Load) http://onsemi.com NIS5112 V Regulated out Load Current 6 ...

Page 7

Basic Operation This device is a self−protected, resettable, electronic fuse. It contains circuits to monitor the input voltage, output current, die temperature, turn−on di/dt and turn−on dV/dt, as well as an enable/timer function. On application of the input voltage, the ...

Page 8

There is an inherent delay in the turn on of the electronic fuse, due to the method of gate drive used. The gate of the power FET is charged through a high impedance resistor, and from the time that the ...

Page 9

0.25 (0.010 −Y− −Z− 0.25 (0.010 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting ...

Related keywords