BCR08PN_07 INFINEON [Infineon Technologies AG], BCR08PN_07 Datasheet - Page 2

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BCR08PN_07

Manufacturer Part Number
BCR08PN_07
Description
NPN/PNP Silicon Digital Transistor Array
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Electrical Characteristics at T
Parameter
DC Characteristics for NPN and PNP Types
Emitter cutoff current
V
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Input off voltage
I
Input on Voltage
I
Input resistor
Resistor ratio
AC Characteristics for NPN and PNP Types
Transition frequency
I
Collector-base capacitance
V
1) Pulse test: t < 300 s; D < 2%
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector cutoff current
V
C
C
C
C
C
C
C
EB
CB
CB
= 10 mA, V
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 100 µA, I
= 10 µA, I
= 5 V, I
= 10 V, f = 1 MHz
= 40 V, I
C
CE
CE
E
B
E
= 0
CE
B
CE
= 0
= 0.5 mA
= 0
= 0
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
= 5 V
A
=25°C, unless otherwise specified
2
Symbol
V
V
I
I
h
V
V
V
R
R
f
C
T
CBO
EBO
FE
cb
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
1
1
/R
2
0.042 0.047
min.
0.4
0.5
1.5
50
50
70
-
-
-
-
-
Values
typ.
170
2.2
2
-
-
-
-
-
-
-
-
0.052 -
max.
100
164
0.3
0.8
1.1
2.9
BCR08PN
2007-07-24
-
-
-
-
-
MHz
pF
Unit
V
nA
µA
-
V
k

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