NCP1611ADR2G ONSEMI [ON Semiconductor], NCP1611ADR2G Datasheet - Page 12

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NCP1611ADR2G

Manufacturer Part Number
NCP1611ADR2G
Description
Enhanced, High-Efficiency Power Factor Controller
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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140
130
120
100
850
800
750
700
650
560
540
520
500
480
460
440
420
110
90
80
70
60
−50
−50
−50
Figure 27. “Overstress” Protection Leading
Figure 29. Zero Current Detection, V
−30
−30
−30
Figure 31. Hysteresis of the Zero Current
Detection Comparator vs. Temperature
Edge Blanking vs. Temperature
T
T
T
−10
−10
−10
J
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
Rising vs. Temperature
10
10
10
30
30
30
50
50
50
70
70
70
TYPICAL CHARACTERISTICS
90
90
90
CS/ZCD
110
110
110
http://onsemi.com
130
130
130
12
100
270
265
260
255
250
245
240
235
230
1.8
1.7
1.6
1.5
1.4
1.3
1.2
80
60
40
20
0
−50
−50
−50
Figure 28. Over−Current Protection Delay from
V
Figure 30. Zero Current Detection, V
CS/ZCD
−30
−30
−30
Figure 32. V
−10
T
−10
T
−10
T
J
J
J
> V
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
10 V/ms) vs. Temperature
Falling vs. Temperature
CS(th)
10
10
10
ZCD(th)
Temperature
to DRV Low (dV
30
30
30
over V
50
50
50
CS(th)
70
70
70
CS/ZCD
Ratio vs.
90
90
90
CS/ZCD
110
110
/ dt =
110
130
130
130

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