N04L1618C2AB NANOAMP [NanoAmp Solutions, Inc.], N04L1618C2AB Datasheet - Page 7

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N04L1618C2AB

Manufacturer Part Number
N04L1618C2AB
Description
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
Manufacturer
NANOAMP [NanoAmp Solutions, Inc.]
Datasheet
NanoAmp Solutions, Inc.
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Timing of Read Cycle (CE1 = OE = V
Timing Waveform of Read Cycle (WE=V
Address
Data Out
CE1
CE2
LB, UB
Address
OE
Data Out
Previous Data Valid
High-Z
t
LBLZ,
(DOC# 14-02-016 REV G ECN# 01-1266)
t
OH
t
UBLZ
t
OLZ
t
LZ
IL
t
AA
, WE = CE2 = V
t
t
AA
IH
CO
)
t
t
OE
LB,
t
RC
t
RC
t
UB
IH
)
Data Valid
N04L1618C2A
Data Valid
t
LBHZ,
t
OHZ
t
UBHZ
t
HZ

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