N04L1618C2AB NANOAMP [NanoAmp Solutions, Inc.], N04L1618C2AB Datasheet - Page 3

• Manufacturer Part Number: N04L1618C2AB
• Description: 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Functional Block Diagram
Functional Description
1. When UB and LB are in select mode (low), I/O
are affected as shown. When UB is in the select mode only I/O
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
4. The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from
any expernal influence.
Capacitance
1. These parameters are verified in device characterization and are not 100% tested
CE1
H
X
X
L
L
L
Address
Inputs
A0 - A3
Address
Inputs
A4 - A17
Input Capacitance
I/O Capacitance
CE1
CE2
WE
OE
UB
LB
CE2
X
X
H
H
H
L
Item
1
WE
X
X
X
H
H
L
Page
Address
Decode
Logic
Word
Address
Decode
Logic
Control
Logic
OE
X
H
X
X
X
L
3
Symbol
UB
C
L
L
L
C
X
X
H
1
1
1
I/O
IN
(DOC# 14-02-016 REV G ECN# 01-1266)
0
- I/O
LB
L
L
L
X
X
H
16K Page
x 16 word
x 16 bit
RAM Array
1
1
1
15
are affected as shown. When LB only is in the select mode only I/O
V
V
IN
IN
8
I/O
- I/O
= 0V, f = 1 MHz, T
= 0V, f = 1 MHz, T
Data Out
Data In
High Z
High Z
High Z
High Z
0
Test Condition
15
- I/O
are affected as shown.
15
1
A
A
= 25
= 25
N04L1618C2A
Standby
Standby
Standby
MODE
o
o
Write
Active
Read
C
C
Input/
Output
Mux
and
Buffers
3
2
2
2
Min
Active -> Standby
Active -> Standby
I/O8 - I/O15
I/O0 - I/O7
Max
Standby
POWER
8
8
Standby
Standby
Standby
4
Unit
0
pF
pF
- I/O
4
4
7