M58BW16FB4T3 STMICROELECTRONICS [STMicroelectronics], M58BW16FB4T3 Datasheet - Page 39

• Manufacturer Part Number: M58BW16FB4T3
• Description: 16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M58BW16F, M58BW32F
Table 11.
1. BCR = Burst Configuration Register.
2. SBA is the start address of each block.
Table 12.
1. T
2. The minimum effective erase time is defined as the minimum time required between the last Erase
Full Chip Program
Double Word Program
512 Kbit Block Erase
256 Kbit Block Erase
64 Kbit Block Erase
Program Suspend Latency Time
Erase Suspend Latency Time
Minimum effective erase time
Program/Erase Cycles (per Block)
Configuration Register
Burst Configuration
Resume command and the next Erase Suspend command for the internal Flash memory Program/Erase
Controller to be able to execute its algorithm.
A
Block Protection
Manufacturer
= –40 to 125°C, V
Register
Device
Code
Parameters
Read Electronic Signature
Program, Erase times and endurance cycles
DD
= 2.7V to 3.6V, V
(2)
M58BW16FT
M58BW16FB
M58BW32FT
M58BW32FB
Device
All
All
DDQ
= 2.6V to V
Min
SBA+02h
Amax-A0
00000h
00001h
00001h
00005h
00001h
00001h
DD
M58BWxxF
(2)
Typ
0.8
0.6
15
15
1
(1)
00000000h (Unprotected)
00000001h (Protected)
Command interface
0000883Ah
DQ31-DQ0
00000020h
00008839h
00008838h
00008837h
100,000
BCR
Max
1.6
1.2
20
35
10
30
30
2
(1)
cycles
Unit
µs
µs
µs
µs
39/81
s
s
s
s