HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 51

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HYB39S64160AT-10

Manufacturer Part Number
HYB39S64160AT-10
Description
64 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
21.2 Full Page Write Cycle
DQM
Addr
CKE
RAS
CAS
CLK
BS
AP
WE
DQ
CS
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
CK3
T1
Command
T2
Bank A
Write
CAx
DAx DAx+1
T3
T4
Command
Activate
DAx+2
Bank B
RBx
RBx
T5
The burst counter wraps
page address back to zero
DAx+3
from the highest order
during this time interval.
T6
DAx-1
T
DAx
T
DAx+1
T
Command
Bank B
Write
DBx DBx+1
CBx
T
Full Page burst operation does not
terminate when the length is
satisfied; the burst counter
increments and continues
bursting beginning with
the starting address.
T
DBx+2
T
DBx+3
T
DBx+4 DBx+5
T
T
Burst Stop
Command
Burst Length = Full Page, CAS Latency = 3
T
Precharge
Command
Bank B
Data is ignored.
T
T
T
Command
Activate
Bank B
RBy
RBy
T
T
T

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